Page 59 - TSIA 2024 年會_年刊

凃玉發 Yu-Fa Tu 國立清華大學 電子工程研究所 獲獎摘要 博士研究生 凃玉發同學自 2018 年起於國立清華大學電子工程研究所攻讀博士班，研究領域為 Bipolar-CMOS- DMOS (BCD) 與薄膜電晶體 (TFT)，主要運用半導體元件物理知識，深入探討元件的電性與可靠度 物理機制，釐清元件異常的問題，並提出相對應的解決方案。相關研究成果已以第一作者身分共發 表 6 篇 SCI 國際期刊，包含 IEEE EDL 2 篇、IEEE TED 3 篇與 APEX 1 篇，並獲多項獎項肯定。 得獎經歷 / 專利 • 2022財團法人中技社中技社科技獎學金 • 2021國防工業發展基金會國防工業獎學金 • 2020財團法人平安菁英教育基金會菁英獎學金 • 2018國立清華大學校長獎學金 重要學術著作 • 2017~2018台積電-清大聯合研發中心研究助理獎助學金 • 已獲證發明專利:中華民國1件(I834349) • 申請中發明專利:中華民國1件、美國1件 1. Y.-F. Tu, I-N. Lu, H.-C. Chen, et al., "Improving a-InGaZnO TFTs Reliability by Optimizing Electrode Capping Structure under Negative Bias Illumination Stress," IEEE Electron Device Lett., vol. 41, no. 8, pp. 1221–1224, Aug. 2020, DOI : 10.1109/LED.2020.3006487. 2. Y.-F. Tu, J.-W. Huang, T.-C. Chang, et al., "Asymmetric Electrode Structure Induces Dual-Channel Phenomenon Under Hot-Carrier Stress in Organic Thin-Film Transistors," IEEE Electron Device Lett., vol. 44, no. 9, pp. 1496–1499, Sep. 2023, DOI : 10.1109/LED.2023.3294551. 3. Y.-F. Tu, C.-L. Chiang, T.-C. Chang, et al., "Improving Reliability of a-InGaZnO TFTs With Optimal Location of Al2O3 Passivation in Moist Environment," IEEE Trans. Electron Devices, vol. 69, no. 6, pp. 3181–3185, Jun. 2022, DOI : 10.1109/TED.2022.3166745. 4. Y.-F. Tu, J.-W. Huang, T.-C. Chang, et al., "Stably Saturated Output Current Characteristics and Hot-Carrier Reliability of a-InGaZnO Thin- Film Transistors With Source-Connected Field Plate," IEEE Trans. Electron Devices, vol. 70, no. 9, pp. 4669–4673, Sep. 2023, DOI : 10.1109/ TED.2023.3296391. 5. W.-C. Hung, Y.-F. Tu, T.-C. Chang, et al., "Abnormal Two-Stage Degradation Under Hot Carrier Injection With Lateral Double-Diffused MOS With 0.13-μm Bipolar-CMOS-DMOS Technology," IEEE Trans. Electron Devices, vol. 70, no. 7, pp. 3419–3423, Jul. 2023, DOI : 10.1109/ TED.2023.3276734. (W.-C. Hung, Y.-F. Tu contribute equally) 6. Y.-F. Tu, T.-C. Chang, K.-J. Zhou, et al., "Analysis of self-heating-related instability in n-channel low-temperature polysilicon TFTs with different S/D contact hole densities," Appl. Phys. Express, vol. 15, p. 034003, Feb. 2022, DOI : 10.35848/1882-0786/ac4e25. 7. W.-C. Hung, Y.-F. Tu, T.-C. Chang, et al., "Abnormal On-Current Degradation Under Non-Conductive Stress in Contact Field Plate Lateral Double-Diffused Metal-Oxide Semiconductor Transistor With 0.13-μm Bipolar-CMOS-DMOS Technology," IEEE Electron Device Lett., vol.43, no. 5, pp. 769–772, May. 2022, DOI : 10.1109/LED.2022.3164475. 8. W.-C. Hung, W.-C. Hung, T.-C. Chang, Y.-F. Tu, et al., "Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS With 0.13-μm Bipolar-CMOS-DMOS Technology," IEEE Electron Device Lett., vol.44, no. 5, pp. 789–792, May. 2023, DOI : 10.1109/LED.2023.3260865. 9. Y.-H. Hung, T.-C. Chang, Y.-F. Tu, et al., "Improving Drain-Induced Barrier Lowering Effect and Hot Carrier Reliability With Terminal via Structure on Half-Corbino Organic Thin-Film Transistors," IEEE Electron Device Lett., vol.43, no. 4, pp. 569–572, Apr. 2022, DOI : 10.1109/ LED.2022.3149898. 10.L.-C. Sun, S.-K. Lin, Y.-H. Yeh, Y.-F. Tu, et al., "Investigation Between Recover Behavior and Defect With Variation of Light Source in AlGaN/ GaN HEMTs After Hot-Carrier Stress," IEEE Electron Device Lett., vol.44, no. 4, pp. 586–589, Apr. 2023, DOI : 10.1109/LED.2023.3250430. 指導教授 連振炘 教授 現職 ・ 國立清華大學 / 電子工程研究所 學歷 ・ 美國俄亥俄州立大學 / 物理所博士 經歷 ・ 國立清華大學 / 教授 ・ 國立清華大學 / 先進電源科技中心主任 張鼎張 講座教授 現職 ・ 國立中山大學 / 物理系 學歷 ・ 國立陽明交通大學 / 電子所博士 經歷 ・ IEEE Fellow ・ 國立中山大學 / 講座教授 (2016~ 迄今 ) ・ 國家奈米實驗室研究員 ・ 有庠科技講座 Taiwan Semiconductor Industry Association ┃台灣半導體產業協會 57 理事長的話 議程與講員簡歷 歷屆理事長重要事蹟與貢獻 TSIA 半導體獎 專題報導 活動報導 附錄