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2024 周冠儒 Kuan-Ju Zhou 國立中山大學 物理系 獲獎摘要 博士研究生 周冠儒同學自 2018 年起於國立中山大學物理所攻讀博士班。主要研究領域為可變電阻式記憶體 (RRAM)，薄膜電晶體 (Thin Film Transistor)，其主動層材料包含低溫多晶矽 (LTPS)、非晶態銦鎵 鋅氧 (a-IGZO)。深入探討元件之可靠度相關議題並透過電性量測、材料分析、元件模擬等方式釐 清相關物理機制，並提出相應解決方案。研究成果共發表 7 篇國際期刊，分別發表 IEEE Electron Device Letter、Journal of Materials Chemistry C、ACS Applied Electronic Materials、Journal of Physics D: Applied Physics、Nanoscale 等頂尖國際期刊。周同學於 2021 年獲「科技部補助博 士生赴國外研究」，並以訪問學者身分於日本東京工業大學材料所進行研究。 得獎經歷 / 專利 • 2023 ULSIC VS TFT 8 Best poster presentation award • 以第六發明人發表1項台灣專利(I834349) • 2022日本薄膜・表面物理分科会 奨励賞 • 2022 Solid State Devices and Materials, Oral presentation Young Researcher Award 重要學術著作 • 2021 科技部補助博士生赴國外研究 • 2020台灣物理學會大專生優良論文獎 • 2019菁英博士班獎學金 • 2019 科技部博士班 獎學金 1. Kuan-Ju Zhou, Ting-Chang Chang, Po-Yu Yen, Yu-An Chen, Ya-Ting Chien, Bo-Shen Huang, Po-Yi Lee, Tzu-Hsuan Juan, Simon M. Sze, Yang-Shun Fan, Chen-Shuo Huang, and Chih- Hung Tsai (2024, Apr), Enhancing Reliability of Short-channel Dual gate InGaZnO Thin Film Transistors by Bottom-gate Oxide Engineering, IEEE Electron Device Letters, 45(4), pp. 593–596. 2. Kuan-Ju Zhou, Ting-Chang Chang, Po-Hsun Chen, Bo-Shen Huang and Simon M. Sze, Analysis of carrier injection under high temperature AC operation in top gate IGZO, International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC VS TFT 8) (2023). (Best poster presentation award) 3. Kuan-Ju Zhou, Ting-Chang Chang, Simon M. Sze, Ya-Ting Chien and Po-Yu Yen, Utilizing Dual-stacked IGZO channel structure to Achieve Optical Memories Application, International Conference on Solid State Devices and Materials (SSDM) (2022). (Oral presentation Young Researcher) 4. Kuan-Ju Zhou, Ting-Chang Chang, Mao-Chou Tai, Yu-An Chen, Ya-Ting Chien, Pei-Jun Sun, Po-Yu Yen, Simon M. Sze, Yang-Shun Fan, Chen-Shuo Huang, Kuo-Kuang Chen, and Chih- Hung Tsai (2022, May), Abnormal Threshold Voltage Shift and Sub-channel Generation in Top-Gate InGaZnO TFTs under Backlight Negative Bias Illumination Stress, ACS Applied Electronic Materials, 5(2), pp. 1183-1188. 5. Kuan-Ju Zhou, Min-Chen Chen, Ting-Chang Chang, Shih-Kai Lin, Yu-Bo Wang, Yong-Ci Zhang, Po-Yu Yen, Kui-You Shao, Hui-Chun Huang, Jen-Wei Huang and Simon M Sze (2022, Dec), Interfacial Variation in HfO2-Based Resistive Switching Devices with Titanium Electrodes under Asymmetric Bias Operation, Journal of Physics D: Applied Physics, 56, pp. 065101. 6. Kuan-Ju Zhou, Po-Hsun Chen, Yu-Zhe Zheng, Mao-Chou Tai, Yu-Xuan Wang, Ya-Ting Chien, Pei-Jun Sun, Hui-Chun Huang, Ting-Chang Chang and Simon M. Sze (2022, May), Heterogeneous metal oxide channel structure for ultra-high sensitivity phototransistor with modulated operating conditions, Journal of Materials Chemistry C, 10(24), pp. 9192–9197. 7. Kuan-Ju Zhou, Yu-Zhe Zheng, Mao-Chou Tai, Po-Hsun Chen, Yang-Hao Hung, Yu-Fa Tu , Jian-Jie Chen, Wei-Chun Hung, Yu-Xuan Wang, Ya-Ting Chien, Pei-Jun Sun, Hui-Chun Huang, and Ting-Chang Chang (2022, Apr), Suppressing Drain-Induced Barrier Lowering and Kink Effect in Low-Temperature Poly-Si TFTs Using a Partitioned Light Shield, IEEE Electron Device Letters, 43(4), pp. 576–579. 8. Chih-Yang Lin, Kuan-Ju Zhou, Ting-Chang Chang, Li-Chuan Sun, Yung-Fang Tan, Chung-Wei Wu, Yu-Hsuan Yeh, Wen-Chung Chen, Chun-Chu Lin, Wei-Chen Huang, Cheng-Hsien Wu, Shih-Kai Lin, Tzu-Heng Lin, Jen-Wei Huang, and Simon M. Sze (2020, Oct), Stabilizing resistive random access memory by constructing an oxygen reservoir with analyzed state distribution., Nanoscale, 12(46), pp. 23532–23536. 9. Kuan-Ju Zhou, Ting-Chang Chang, Chih-Yang Lin, Chun-Kuei Chen, Yi-Ting Tseng, Hao-Xuan Zheng, Hong-Chih Chen, Li-Chuan Sun, Chih-Ying Lien, Yung-Fang Tan, Chung-Wei Wu, Yu-Hsuan Yeh, and Simon M. Sze (2019, Dec), Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access Memory, IEEE Electron Device Letters, 41(2), pp. 224–227. 10. Hong-ChihChen,Kuan-JuZhou,Po-HsunChen,Guan-FuChen,Shin-PingHuang,Jian-JieChen,Chuan-WeiKuo,Yu-ChingTsao,Mao-ChouTai,An-KuoChu,Wei-ChihLai,andTing- Chang Chang (2019, Aug), Abnormal Unsaturated Output Characteristics in a-InGaZnO TFTs With Light Shielding Layer, IEEE Electron Device Letters, 40(8), pp. 1281–1284. 指導教授 張鼎張 講座教授 現職 ・ 國立中山大學 / 物理系 學歷 ・ 國立陽明交通大學 / 電子所博士 經歷 ・ IEEE Fellow ・ 國立中山大學 / 講座教授 (2016~ 迄今 ) ・ 國家奈米實驗室研究員 ・ 有庠科技講座 56
